Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of ...

The spin degree of freedom of charge carrier spins and the host’s nuclear spins in semiconductors are potential sources for the next generation of spintronics applications which motivate the deliberate investigation of ...

We have studied the single-electron transport spectrum of a quantum dot in GaAs/AlGaAs resonant tunneling device. The measured spectrum has irregularities indicating a broken circular symmetry. We model the system with an ...